Memristor & Content Addressable Memory
نویسندگان
چکیده
منابع مشابه
“ Memristor & Content Addressable Memory ”
-Memristor is the fourth fundamental passive element after resistor, inductor and capacitor. Memristor is memory resistor which is two terminal device. This semiconductor device is statistically proved by a student in china Leon Chua in 1971. And discovered by scientist. R.Stanley Williams and its team in April 30,2008 in lab of HP. It consist a semiconductor of titanium dioxide in which one ha...
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Memristor is short for memory resistor, which provides a functional relation between flux and charge. Professor Leon Chua named and formulated it in his paper "Memristor—The Missing Circuit Element" in 1971. The memristor has a special effect, ‘the delayed switching effect’, which is the memristor switching takes place with a time delay. Content addressable memory (CAM) is a type of associative...
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This paper provides new approach for nonvolatile Memristor-based Content Addressable Memory MCAM cell using memristor with CMOS processing technology in order to get high speed read/write operations within high packing density and low power dissipation. The proposed cell uses only two memristors as a memory cell and CMOS controlling circuitry which uses latching to decrease time required for wr...
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ژورنال
عنوان ژورنال: International Journal of Electronics and Communication Engineering
سال: 2016
ISSN: 2348-8549
DOI: 10.14445/23488549/ijece-v3i5p110